Influence of focus offset on the microstructure of an intermetallic gamma-TiAl based alloy produced by electron beam powder bed fusion

It is well established in literature that, when processing intermetallic gamma-TiAl components by electron beam powder bed fusion, a banded microstructure is frequently formed because of an inhomogeneous Al distribution since more pronounced evaporation of Al occurs at the top of the melt pool. This feature is particularly promoted when highly energetic process parameters (high beam currents, slow beam speeds, narrow line offsets) are used. Therefore, an approach already suggested in the literature to reduce the Al loss is to minimize the energy level of the process parameter during production. However, there is a limit to such kind of approach: minimizing the beam current or increasing the beam speed, or increasing the line offset will, at a certain point, results in not being able to achieve a completely dense material and thus some process -induced porosity, the so-called lack-of-fusion defects, starts to occur in the produced parts.In this study, the effect of an additional parameter of the electron beam powder bed fusion process is taken under consideration: the focus offset (FO), i.e. the distance between the focusing plane of the electron beam with respect to the powder bed. The effect of the FO on the residual porosity, microstructure, phase composition, hardness as well as chemical composition is investigated, thus having the possibility to demonstrate that also the FO can affect the Al loss and play a fundamental role in the generation of a homogenous microstructure, contributing to mitigate the appearance of a banded microstructure

Information-rich quality controls prediction model based on non-destructive analysis for porosity determination of AISI H13 produced by electron beam melting

The number of materials processed via additive manufacturing (AM) technologies has rapidly increased over the past decade. As of these emerging technologies, electron beam powder bed fusion (EB-PBF) process is becoming an enabling technology to manufacture complex-shaped components made of thermal-cracking sensitive materials, such as AISI H13 hot-work tool steel. In this process, a proper combination of process parameters should be employed to produce dense parts. Therefore, one of the first steps in the EB-PBF part production is to perform the process parameter optimization procedure. However, the conventional procedure that includes the image analysis of the cross-section of several as-built samples is time-consuming and costly. Hence, a new model is introduced in this work to find the best combination of EB-PBF process parameters concisely and cost-effectively. A correlation between the surface topography, the internal porosity, and the process parameters is established. The correlation between the internal porosity and the melting process parameters has been described by a high robust model (R-adj(2) = 0.91) as well as the correlation of topography parameters and melting process parameters (R-adj(2) = 0.77-0.96). Finally, a robust and information-rich prediction model for evaluating the internal porosity is proposed (R-adj(2) = 0.95) based on in situ surface topography characterization and process parameters. The information-rich prediction model allows obtaining more robust and representative model, yielding an improvement of about 4% with respect to the process parameter-based model. The model is experimentally validated showing adequate performances, with a RMSE of 2% on the predicted porosity. This result can support process and quality control designers in optimizing resource usage towards zero-defect manufacturing by reducing scraps and waste from destructive quality controls and reworks

Residual stress investigation on Ti-48Al-2Cr-2Nb samples produced by Electron Beam Melting process

Ti-48Al-2Cr-2Nb (Ti-48-2-2) is an intermetallic alloy belonging to a family of gamma-TiAl intermetallic alloys that are attracting significant attention. Electron Beam Melting (EBM) process is today the only manufacturing process that allows effective production of parts made by these kinds of alloys. Proper process control avoids high temperatures in the surrounding areas that may generate significant residual stresses that could cause micro-cracks. In this paper, an investigation on the residual stress state on Ti-48-2-2 parts is carried out using the hole drilling method. In particular, the influence of EBM process parameters is evaluated in order to understand the effects of the residual stresses on part integrity

Analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors: The influence of HfO2 thickness, temperature, and oxide charge

We report a new analysis of electron mobility in HfO2/TiN gate metal-oxide-semiconductor field effect transistors (MOSFETs) by investigating the influence of HfO2 thickness (1.6-3 nm), temperature (50-350 K), and oxide charge (similar to 1x10(11)-8x10(12) cm(-2)) in the high inversion charge region. The fixed oxide charge and interface state densities are deliberately increased using negative-bias-temperature stress, allowing the determination of the Coulomb scattering term as a function of temperature for various oxide charge levels. The temperature dependence of the Coulomb scattering term is consistent with the case of a strongly screened Coulomb potential. Using the experimentally determined temperature dependence of Coulomb scattering term, a model is developed for the electron mobility, including the effects oxide charge (mu(C)), high-k phonon (mu(Ph-Hk)), silicon phonon (mu(Ph-Si)), and surface roughness scattering (mu(SR)). The model provides an accurate description of the experimental data for variations in HfO2 thickness, temperature, and oxide charge. Using the model the relative contributions of each mobility component are presented for varying oxide charge and high-k thickness. Scaling of the HfO2 physical thickness provided a reduction in the oxide charge and high-k phonon scattering mechanisms, leading to an increase in electron mobility in HfO2/TiN gate MOSFETs

Dynamic Mechanisms of Cell Rigidity Sensing: Insights from a Computational Model of Actomyosin Networks

Cells modulate themselves in response to the surrounding environment like substrate elasticity, exhibiting structural reorganization driven by the contractility of cytoskeleton. The cytoskeleton is the scaffolding structure of eukaryotic cells, playing a central role in many mechanical and biological functions. It is composed of a network of actins, actin cross-linking proteins (ACPs), and molecular motors. The motors generate contractile forces by sliding couples of actin filaments in a polar fashion, and the contractile response of the cytoskeleton network is known to be modulated also by external stimuli, such as substrate stiffness. This implies an important role of actomyosin contractility in the cell mechano-sensing. However, how cells sense matrix stiffness via the contractility remains an open question. Here, we present a 3-D Brownian dynamics computational model of a cross-linked actin network including the dynamics of molecular motors and ACPs. The mechano-sensing properties of this active network are investigated by evaluating contraction and stress in response to different substrate stiffness. Results demonstrate two mechanisms that act to limit internal stress: (i) In stiff substrates, motors walk until they exert their maximum force, leading to a plateau stress that is independent of substrate stiffness, whereas (ii) in soft substrates, motors walk until they become blocked by other motors or ACPs, leading to submaximal stress levels. Therefore, this study provides new insights into the role of molecular motors in the contraction and rigidity sensing of cells

Influence of surface geometry on the culture of human cell lines: a comparative study using flat, round-bottom and v-shaped 96 well plates

© 2017 Shafaie et al. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.In vitro cell based models have been invaluable tools for studying cell behaviour and for investigating drug disposition, toxicity and potential adverse effects of administered drugs. Within this drug discovery pipeline, the ability to assess and prioritise candidate compounds as soon as possible offers a distinct advantage. However, the ability to apply this approach to a cell culture study is limited by the need to provide an accurate, in vitro-like, microenvironment in conjunction with a low cost and high-throughput screening (HTS) methodology. Although the geometry and/or alignment of cells has been reported to have a profound influence on cell growth and differentiation, only a handful of studies have directly compared the growth of a single cell line on different shaped multiwell plates the most commonly used substrate for HTS, in vitro, studies. Herein, the impact of various surface geometries (flat, round and v-shaped 96 well plates), as well as fixed volume growth media and fixed growth surface area have been investigated on the characteristics of three commonly used human cell lines in biopharmaceutical research and development, namely ARPE-19 (retinal epithelial), A549 (alveolar epithelial) and Malme-3M (dermal fibroblastic) cells. The effect of the surface curvature on cells was characterised using a combination of a metabolic activity assay (CellTiter AQ/MTS), LDH release profiles (CytoTox ONE) and absolute cell counts (Guava ViaCount), respectively. In addition, cell differentiation and expression of specific marker proteins were determined using flow cytometry. These in vitro results confirmed that surface topography had a significant effect (p < 0.05) on cell activity and morphology. However, although specific marker proteins were expressed on day 1 and 5 of the experiment, no significant differences were seen between the different plate geometries (p < 0.05) at the later time point. Accordingly, these results highlight the impact of substrate geometry on the culture of a cell line and the influence it has on the cells' correct growth and differentiation characteristics. As such, these results provide important implications in many aspects of cell biology the development of a HTS, in vitro, cell based systems to further investigate different aspects of toxicity testing and drug delivery.Peer reviewedFinal Published versio

Fighting stochastic variability in a D-type flip-flop with transistor-level reconfiguration

In this study, the authors present a design optimisation case study of D-type flip-flop timing characteristics that are degraded as a result of intrinsic stochastic variability in a 25 nm technology process. What makes this work unique is that the design is mapped onto a multi-reconfigurable architecture, which is, like a field programmable gate array (FPGA), configurable at the gate level but can then be optimised using transistor level configuration options that are additionally built into the architecture. While a hardware VLSI prototype of this architecture is currently being fabricated, the results presented here are obtained from a virtual prototype implemented in SPICE using statistically enhanced 25 nm high performance metal gate MOSFET compact models from gold standard simulations for pre-fabrication verification. A D-type flip-flop is chosen as a benchmark in this study, and it is shown that timing characteristics that are degraded because of stochastic variability can be recovered and improved. This study highlights significant potential of the programmable analogue and digital array architecture to represent a next-generation FPGA architecture that can recover yield using post-fabrication transistor-level optimisation in addition to adjusting the operating point of mapped designs

A Cooperative Interaction between Nontranslated RNA Sequences and NS5A Protein Promotes In Vivo Fitness of a Chimeric Hepatitis C/GB Virus B

GB virus B (GBV-B) is closely related to hepatitis C virus (HCV), infects small non-human primates, and is thus a valuable surrogate for studying HCV. Despite significant differences, the 5′ nontranslated RNAs (NTRs) of these viruses fold into four similar structured domains (I-IV), with domains II-III-IV comprising the viral internal ribosomal entry site (IRES). We previously reported the in vivo rescue of a chimeric GBV-B (vGB/IIIHC) containing HCV sequence in domain III, an essential segment of the IRES. We show here that three mutations identified within the vGB/IIIHC genome (within the 3′NTR, upstream of the poly(U) tract, and NS5A coding sequence) are necessary and sufficient for production of this chimeric virus following intrahepatic inoculation of synthetic RNA in tamarins, and thus apparently compensate for the presence of HCV sequence in domain III. To assess the mechanism(s) underlying these compensatory mutations, and to determine whether 5′NTR subdomains participating in genome replication do so in a virus-specific fashion, we constructed and evaluated a series of chimeric subgenomic GBV-B replicons in which various 5′NTR subdomains were substituted with their HCV homologs. Domains I and II of the GBV-B 5′NTR could not be replaced with HCV sequence, indicating that they contain essential, virus-specific RNA replication elements. In contrast, domain III could be swapped with minimal loss of genome replication capacity in cell culture. The 3′NTR and NS5A mutations required for rescue of the related chimeric virus in vivo had no effect on replication of the subgenomic GBneoD/IIIHC RNA in vitro. The data suggest that in vivo fitness of the domain III chimeric virus is dependent on a cooperative interaction between the 5′NTR, 3′NTR and NS5A at a step in the viral life cycle subsequent to genome replication, most likely during particle assembly. Such a mechanism may be common to all hepaciviruses

Identification of GBV-D, a Novel GB-like Flavivirus from Old World Frugivorous Bats (Pteropus giganteus) in Bangladesh

Bats are reservoirs for a wide range of zoonotic agents including lyssa-, henipah-, SARS-like corona-, Marburg-, Ebola-, and astroviruses. In an effort to survey for the presence of other infectious agents, known and unknown, we screened sera from 16 Pteropus giganteus bats from Faridpur, Bangladesh, using high-throughput pyrosequencing. Sequence analyses indicated the presence of a previously undescribed virus that has approximately 50% identity at the amino acid level to GB virus A and C (GBV-A and -C). Viral nucleic acid was present in 5 of 98 sera (5%) from a single colony of free-ranging bats. Infection was not associated with evidence of hepatitis or hepatic dysfunction. Phylogenetic analysis indicates that this first GBV-like flavivirus reported in bats constitutes a distinct species within the Flaviviridae family and is ancestral to the GBV-A and -C virus clades

Etude de silicium implanté à l'arsenic par effet de transport. Influence du recuit thermique

A study of the effects of thermal annealing on the transport properties in arsenic implanted silicon films is reported. In particular, the sheet resistance and the Hall mobility obtained by the Van der Pauw method is measured as a function of temperature (77 K to 300 K) on N+ /N non annealed and isothermally annealed samples between 300 °C to 1100 °C. The activation energy of the recovery process of the ionic implantation damages found on the order to 0.65 eV is likely attributed to a local reconstruction of the layer. Around 420 °C, the sheet resistance varies on several orders of magnitude and the Hall mobility variations with temperature clearly put toward a noticeable change of the scattering processes with annealing temperature.Une étude des effets du recuit thermique sur les propriétés de transport dans le silicium implanté à l'arsenic est présentée. En particulier, la résistance carré et la mobilité de Hall obtenues par la méthode de Van der Pauw ont été mesurées en fonction de la température (77 K à 300 K) sur des échantillons N+ /N non recuits et soumis à des recuits isothermes entre 300 °C et 1 100 °C. L'énergie d'activation du processus de guérison des dommages causés par l'implantation ionique, trouvée de l'ordre de 0,65 eV, est attribuable à une restructuration locale des couches. Au voisinage de 420 °C, la résistance carré varie de plusieurs ordres de grandeurs et les variations de la mobilité de Hall avec la température traduisent un changement notable des mécanismes de collisions avec la température de recuit